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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

MLPAK33 MOSFETs

MLPAK33 MOSFETs

General description

主要特性和優(yōu)勢(shì)

Features and benefits

  • Large heat sink for high thermal power capability
  • Small 3.3 x 3.3 mm footprint
  • Low height of only 0.8 mm
  • Optimized for a consumer grade application profile
  • Low spiking and ringing for low EMI designs
  • Voltage range VDS 25 - 30 V
  • Low QG and QGD for super-fast switching
  • Low RDSon down to 6 mΩ and ID up to 13 A
  • Logic-level compatible drive voltage
  • Power dissipation (Ptot) of up to 4.8 W

關(guān)鍵應(yīng)用

Applications

  • Low RDSon load switching for e.g. smartphones
  • DC-to-DC conversion
  • Battery management
  • Charging devices
  • Solid state / hard drives

Parametric search

MLPAK33 MOSFETs
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Products

MOSFETs

型號(hào) 描述 狀態(tài) 快速訪問(wèn)
PXN011-100QS N-channel 100 V, 11 mOhm, standard level Trench MOSFET in MLPAK33 Production
PXN010-30QL 30 V, N-channel Trench MOSFET Production
PXN011-100QL N-channel 100 V, 11 mOhm, logic level Trench MOSFET in MLPAK33 Production
PXN028-100QL N-channel 100 V, 28 mOhm, logic level Trench MOSFET in MLPAK33 Production
PXN040-100QS N-channel 100 V, 40 mOhm, standard level Trench MOSFET in MLPAK33 Production
PXN020-100QS N-channel 100 V, 20 mOhm, standard level Trench MOSFET in MLPAK33 Production
PXN5R4-30QL 30 V, N-channel Trench MOSFET Production
PXN8R3-30QL 30 V, N-channel Trench MOSFET Production
PXN9R0-30QL 30 V, N-channel Trench MOSFET Production
PXN7R7-25QL 25 V, N-channel Trench MOSFET Production
PXN7R7-60QLA N-channel 60 V, 7.7 mOhm, logic level Trench MOSFET in MLPAK33 Production
PXN9R1-60QLA N-channel 60 V, 9.1 mOhm, logic level Trench MOSFET in MLPAK33 Production
PXP062-60QL 60 V, P-channel Trench MOSFET Production
PXP1500-100QS 100 V, P-channel Trench MOSFET Production
PXP400-100QS 100 V, P-channel Trench MOSFET Production
PXP3R7-12QU 12 V, P-channel Trench MOSFET Production
PXN012-60QL N-channel 60 V, 11.5 mOhm, logic level Trench MOSFET in MLPAK33 Production
PXN012-100QS N-channel 100 V, 12 mOhm, standard level Trench MOSFET in MLPAK33 Production
PXN011-60QLA N-channel 60 V, 11 mOhm, logic level Trench MOSFET in MLPAK33 Production
PXN012-100QL N-channel 100 V, 12 mOhm, logic level Trench MOSFET in MLPAK33 Production
PXN4R7-30QL 30 V, N-channel Trench MOSFET Production
PXN6R2-25QL 25 V, N-channel Trench MOSFET Production
PXN6R7-30QL 30 V, N-channel Trench MOSFET Production
PXN6R2-60QLA N-channel 60 V, 6.2 mOhm, logic level Trench MOSFET in MLPAK33 Production
PXN5R7-60QLA N-channel 60 V, 5.7 mOhm, logic level Trench MOSFET in MLPAK33 Production
PXP012-30QL 30 V, P-channel Trench MOSFET Production
PXP011-20QX 20 V, P-channel Trench MOSFET Production
PXN014-100QE 100 V, N-channel Trench MOSFET Production
PXN017-30QL 30 V, N-channel Trench MOSFET Production
PXN018-30QL 30 V, N-channel Trench MOSFET Production
PXN014-60QLA N-channel 60 V, 14 mOhm, logic level Trench MOSFET in MLPAK33 Production
PXN6R8-60QLA N-channel 60 V, 6.8 mOhm, logic level Trench MOSFET in MLPAK33 Production
PXN7R0-30QLA N-channel 30 V, 7.0 mOhm, logic level Trench MOSFET in MLPAK33 Development
PXP013-30QL 30 V, P-channel Trench MOSFET Production
PXP015-30QL 30 V, P-channel Trench MOSFET Production
PXP018-20QX 20 V, P-channel Trench MOSFET Production
PXP020-20QX 20 V, P-channel Trench MOSFET Production
PXP6R1-30QL 30 V, P-channel Trench MOSFET Production
PXP8R3-20QX 20 V, P-channel Trench MOSFET Production
PXP700-150QS 150 V, P-channel Trench MOSFET Production
PXP9R1-30QL 30 V, P-channel Trench MOSFET Production
PXN4R0-30QLA N-channel 30 V, 4.0 mOhm, logic level Trench MOSFET in MLPAK33 Development
PXN5R0-30QLA N-channel 30 V, 5.0 mOhm, logic level Trench MOSFET in MLPAK33 Development
PXP010-20QX 20 V, P-channel Trench MOSFET EndOfLife
PXP018-30QL 30 V, P-channel Trench MOSFET EndOfLife

Documentation

文件名稱 標(biāo)題 類型 日期
AN11304.pdf MOSFET load switch PCB with thermal measurement Application note 2013-01-28
AN11119.pdf Medium power small-signal MOSFETs in DC-to-DC conversion Application note 2013-05-07
AN11599.pdf Using power MOSFETs in parallel Application note 2016-07-13
AN10441.pdf Level shifting techniques in I2C-bus design Application note 2020-02-11
AN90017.pdf Load switches for mobile and computing applications Application note 2020-09-02
AN11156.pdf Using Power MOSFET Zth Curves Application note 2021-01-04
AN11261.pdf RC Thermal Models Application note 2021-03-18
RS3472_RS2943_MLPAK33_Combi.png MLPAK33 (SOT8002-2) Combi Marcom graphics 2021-04-21
vp_MLPAK33_MOSFETs.zip MLPAK33 MOSFETs Value proposition 2021-04-21
SOT8002_1.step 3D model for products with SOT8002-1 package Design support 2021-04-30
AN50005.pdf Paralleling power MOSFETs in high power applications Application note 2021-09-13
AN90032.pdf Low temperature soldering, application study Application note 2022-02-22
AN50014.pdf Understanding the MOSFET peak drain current rating Application note 2022-03-28
AN50006.pdf Power MOSFETs in linear mode Application note 2022-04-12
AN10273.pdf Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN11160.pdf Designing RC Snubbers Application note 2024-10-21
AN90001.pdf Designing in MOSFETs for safe and reliable gate-drive operation Application note 2024-10-28
AN90011.pdf Half-bridge MOSFET switching and its impact on EMC Application note 2025-02-10
AN11158.pdf Understanding power MOSFET data sheet parameters Application note 2025-02-18
AN11243.pdf Failure signature of Electrical Overstress on Power MOSFETs Application note 2025-03-20
AN90059.pdf Power MOSFET gate driver fundamentals Application note 2025-04-22

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